AP20P02GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
2.5V Gate Drive Capability
▼
Fast Switching
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-20V
52mΩ
-18A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20P02GJ) are available for low-profile applications.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 20
± 12
-18
-14
-50
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
201225023
AP20P02GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min. Typ. Max. Units
-20
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.03
-
-
52
85
-
-
-1
-25
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-8A
V
GS
=-2.5V, I
D
=-5A
-
-
-
15
-
-
-
13.5
2.1
1.6
12
20
45
27
1050
410
110
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-8A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
= ± 12
I
D
=-8A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-8A
R
G
=3.3Ω,V
GS
=-4.5V
R
D
=1.25Ω
V
GS
=0V
V
DS
=-16V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
±100
nA
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=-1.2V
T
j
=25℃, I
S
=-10A, V
GS
=0V
Min. Typ. Max. Units
-
-
-
-
-
-
-10
-50
-1.2
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP20P02GH/J
60
45
T
C
=25
o
C
-4.5V
T
C
=150
o
C
-4.5V
-4.0V
-4.0V
-I
D
, Drain Current (A)
40
-I
D
, Drain Current (A)
-3.5V
30
-3.5V
-3.0V
-3.0V
20
15
-2.5V
-2.5V
V
GS
= -2.0V
V
GS
= -2.0V
0
0
2
4
6
0
0
2.5
5
7.5
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2
I
D
= -8A
T
c
=25
℃
120
1.4
I
D
= -8A
V
GS
= -4.5V
80
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
0.8
40
0
0
3
6
9
12
0.2
-50
0
50
100
150
-V
GS
(V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP20P02GH/J
20
40
16
30
-I
D
, Drain Current (A)
12
P
D
(W)
8
4
0
25
50
75
100
o
20
10
0
125
150
0
30
60
90
o
120
150
T
c
, Case Temperature ( C)
T
c
, Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
100us
Normalized Thermal Response (R
thjc
)
0.2
-I
D
(A)
0.1
0.1
0.05
10
1ms
0.02
P
DM
t
0.01
T
Single Pulse
10ms
T
C
=25 °C
Single Pulse
1
0.1
1
10
100
100ms
DC
0.01
0.00001
0.0001
0.001
0.01
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.1
1
-V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP20P02GH/J
8
10000
I
D
= -8A
V
DS
= -16V
-V
GS
, Gate to Source Voltage (V)
6
1000
f=1.0MHz
Ciss
C (pF)
4
Coss
100
2
Crss
0
0
5
10
15
20
10
1
7
13
19
Q
G
, Total Gate Charge (nC)
-V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
1.2
0.9
10
-I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
-V
GS(th)
(V)
1.4
0.6
1
0.3
0
0.2
0.5
0.8
1.1
0
-50
0
50
100
150
-V
SD
(V)
T
j
, Junction Temperature (
o
C)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
